TSAL6200 High Power Infrared Emitting Diode 940nm

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Peak wavelength: 940 nm• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: ± 17°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors